FDB14N30TM Fairchild Semiconductor, FDB14N30TM Datasheet - Page 7
![MOSFET N-CH 300V 14A D2PAK](/photos/5/46/54699/fdb14n30tm_sml.jpg)
FDB14N30TM
Manufacturer Part Number
FDB14N30TM
Description
MOSFET N-CH 300V 14A D2PAK
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDB14N30TM.pdf
(8 pages)
Specifications of FDB14N30TM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms @ 10 V
Forward Transconductance Gfs (max / Min)
10.5 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB14N30TMTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDB14N30TM
Manufacturer:
FSC
Quantity:
172
Part Number:
FDB14N30TM
Manufacturer:
ON/安森美
Quantity:
20 000
Mechanical Dimensions
D2-PAK
7
www.fairchildsemi.com
FDB14N30 Rev. A