FDS2734 Fairchild Semiconductor, FDS2734 Datasheet - Page 4

• Manufacturer Part Number: FDS2734
• Description: MOSFET N-CH 250V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDS2734

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 117 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2610pF @ 100V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.097 Ohms
• Forward Transconductance Gfs (max / Min): 15.1 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS2734TR

FDS2734 Rev. B
Typical Characteristics
Figure 11.
0.1
Figure 9. Unclamped Inductive Switching
10
10
10
10
10
10
10
10
1E-3
1
8
6
4
2
0
Figure 7.
-1
-2
-3
2
1
0
10
0
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
DS
Forward Bias Safe Operating Area
0.01
, DRAIN TO SOURCE VOLTAGE (V)
t
Gate Charge Characteristics
AV
V
10
10
DD
DS(on)
, TIME IN AVALANCHE (mS)
Q
0
g
= 50V
, GATE CHARGE(nC)
Capability
T
J
0.1
= 125
SINGLE PULSE
T
T
J
A
o
20
10
= MAX RATED
C
= 25
1
o
1
C
V
T
J
DD
T
= 25
J
= 200V
= 25°C unless otherwise noted
o
30
C
10
V
DD
10
2
= 125V
10ms
10us
1ms
100ms
DC
1s
100
10
40
3
4
Figure 8.
Figure 10.
1000
5000
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
10
10
Figure 12. Single Pulse Maximum Power
10
4
3
2
1
0
10
0.1
25
-3
R
V
GS
SINGLE PULSE
θ
Capacitance vs Drain to Source Voltage
JA
Maximum Continuous Drain Current vs
= 10V
= 50
V
10
DS
T
Ambient Temperature
50
-2
o
A
,DRAIN TO SOURCE VOLTAGE (V)
C /W
, AMBIENT TEMPERATURE
t, PULSE WIDTH (s)
V
Dissipation
GS
10
1
-1
= 6V
75
V
10
GS
Ciss
T
Coss
0
Crss
= 10V
A
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
100
= 25
I = I
o
10
25
C
10
1
www.fairchildsemi.com
o
C DERATE PEAK
150 T
----------------------- -
(
o
125
C
125
–
)
10
f = 1MHz
V
A
2
GS
= 0V
150
100
10
3