FDS2734 Fairchild Semiconductor, FDS2734 Datasheet - Page 5

• Manufacturer Part Number: FDS2734
• Description: MOSFET N-CH 250V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDS2734

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 117 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2610pF @ 100V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.097 Ohms
• Forward Transconductance Gfs (max / Min): 15.1 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS2734TR

FDS2734 Rev. B
Typical Characteristics
1E-3
1E-4
1E-5
0.01
0.1
4
1
10
D = 0.5
-4
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design
10
-3
Figure 13. Transient Thermal Response Curve
T
J
10
= 25°C unless otherwise noted
t, RECTANGULAR PULSE DURATION(s)
-2
10
-1
5
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
1
= P
DM
x Z
θJA
P
DM
1
/t
x R
2
10
θJA
2
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t
+ T
1
t
2
A
10
3