MTP3055VL Fairchild Semiconductor, MTP3055VL Datasheet
MTP3055VL
Manufacturer Part Number
MTP3055VL
Description
MOSFET N-CH 60V 12A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.MTP3055VL.pdf
(3 pages)
Specifications of MTP3055VL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 6A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
12 A
Power Dissipation
48000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MTP3055VLFS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTP3055VL
Manufacturer:
FUJI
Quantity:
6 000
Part Number:
MTP3055VL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Thermal Characteristics
Package Outlines and Ordering Information
*
MTP3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed
specifically for low voltage, high speed switching
applications i.e. power supplies and power motor
controls.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
V
V
I
P
T
R
R
Symbol
D
Die and manufacturing source subject to change without prior notification
DSS
GSS
D
J
, T
JA
JC
STG
Device Marking
G
Thermal Resistance, Junction-to- Ambient
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation @ T
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to- Case
D
MTP3055VL
S
- Continuous
- Pulsed
TO-220
Derate above 25 C
Parameter
C
= 25 C
T
C
= 25°C unless otherwise noted
DS(ON)
MTP3055VL
Device
Features
• 12 A, 60 V. R
• Critical DC electrical parameters specified at elevated
• Low drive requirements allowing operation directly from
• Rugged internal source-drain diode can eliminate the
• 175 C maximum junction temperature rating.
(Note 1)
temperature.
logic drivers. Vgs(th) < 2 V.
need for an external Zener diode transient suppressor.
.
Package Information
G
DS(ON)
Rails/Tubes
= 0.18
-65 to +175
Ratings
0.32
3.13
62.5
60
12
42
48
15
DISTRIBUTION GROUP*
D
S
@ V
GS
= 5 V
Quantity
45 units
June 2000
MTP3055VL Rev. A1
Units
W/ C
C/W
C/W
W
V
V
A
C
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Datasheet:
MTP3055VL Summary of contents
Page 1
... Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175 C maximum junction temperature rating 25°C unless otherwise noted (Note 1) Device Package Information MTP3055VL . June 2000 DISTRIBUTION GROUP DS(ON Ratings Units 0. -65 to +175 C 3.13 C/W C/W 62.5 Quantity Rails/Tubes 45 units MTP3055VL Rev. A1 ...
Page 2
... Test Conditions (Note 250 250 A, Referenced 150 - 250 250 A, Referenced V V 1.0 MHz 9.1 GS GEN (Note 2) (Note (Note =12 A, di/dt = 100A Min Typ Max Units mV 100 100 nA -100 mV/ C 0.100 0.180 2 8.7 S 345 570 pF 110 160 190 7 1 MTP3055VL Rev. A1 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...