FDPF3860T Fairchild Semiconductor, FDPF3860T Datasheet

MOSFET N-CH 100V 20A TO-220F

FDPF3860T

Manufacturer Part Number
FDPF3860T
Description
MOSFET N-CH 100V 20A TO-220F
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDPF3860T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38.2 mOhm @ 5.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
33.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0382 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
33800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDPF3860T
N-Channel PowerTrench
100V, 20A, 38.2mΩ
Description
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
= 38.2mΩ ( MAX ) @ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-220F
T
D
C
= 5.9A
= 25
Parameter
Parameter
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted
= 25
MOSFET
o
C)
DS(on)
C
C
= 25
= 100
1
o
C
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to AC converters / Synchronous Rectification
o
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
D
-55 to +150
Ratings
Ratings
12.7
33.8
0.27
100
±20
278
300
62.5
3.4
20
80
20
15
3.7
March 2008
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
tm

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FDPF3860T Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDPF3860T Rev. A ® MOSFET General Description = 10V 5.9A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 5.9A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDPF3860T Rev. A Package Reel Size TO-220F - unless otherwise noted C Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = iss C rss = C gd 1500 1000 C oss 500 C rss 0 0 Drain-Source Voltage [V] DS FDPF3860T Rev. A Figure 2. Transfer Characteristics 200 100 10 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 200 100 20V ...

Page 4

... Operation in This Area 1 is Limited by R DS(on) *Notes: 0 Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDPF3860T Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 µ 250 A D 0.0 100 150 200 µ µ ...

Page 5

... FDPF3860T Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDPF3860T Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Package Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FDPF3860T Rev. A TO-220F ±0.20 10.16 ø3.18 ±0.10 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 7 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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