FDPF3860T Fairchild Semiconductor, FDPF3860T Datasheet - Page 2

MOSFET N-CH 100V 20A TO-220F

FDPF3860T

Manufacturer Part Number
FDPF3860T
Description
MOSFET N-CH 100V 20A TO-220F
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDPF3860T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38.2 mOhm @ 5.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
33.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0382 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
33800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF3860T
Manufacturer:
OEG
Quantity:
20 980
Part Number:
FDPF3860T
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDPF3860T Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L =16mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
∆BV
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
I
I
V
t
Q
d(on)
d(off)
f
DSS
GSS
r
S
SM
rr
∆T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
J
≤ 5.9A, di/dt ≤ 200A/µs, V
DSS
FDPF3860T
AS
= 5.9A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF3860T
G
= 25Ω, Starting T
DSS
Device
Parameter
, Starting T
J
T
= 25°C
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-220F
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
DS
GS
GS
GS
GS
GS
DS
DS
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 80V, V
= 48V, T
= 0V, I
= ±20V, V
= 10V, I
= 25V, V
= 50V, I
= 10V, R
= 80V, I
= 10V
= 0V, I
= V
= 10V, I
DS
Test Conditions
, I
2
SD
SD
D
D
Reel Size
D
D
D
C
GS
GS
GEN
GS
= 5.9A
= 5.9A
= 5.9A
= 5.9A
= 5.9A
= 5.9A
DS
= 250µA
= 150
= 0V
= 0V
= 0V, T
-
= 0V
= 6Ω
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
Min.
100
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1350
Typ.
29.1
145
0.1
40
56
60
15
17
24
23
21
7
7
8
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
1800
38.2
500
190
1.3
4.5
40
45
60
25
35
90
20
80
1
50
-
-
-
-
-
-
-
Units
V/
mΩ
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
nC
V
V
S
A
A
V
o
C

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