FDP8440 Fairchild Semiconductor, FDP8440 Datasheet - Page 3

• Manufacturer Part Number: FDP8440
• Description: MOSFET N-CH 40V 100A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8440

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 450nC @ 10V
• Input Capacitance (ciss) @ Vds: 24740pF @ 25V
• Power - Max: 306W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 277 A
• Power Dissipation: 306000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8440 Rev. A6
Typical Performance Characteristics
30000
24000
18000
12000
6000
1.80
1.76
1.72
1.68
Figure 3. On-Resistance Variation vs.
400
100
Figure 5. Capacitance Characteristics
Figure 1. On-Region Characteristics
0.4
10
1
0
0.04
10
0
-1
V
Drain Current and Gate Voltage
V
50
DS
DS
, Drain-Source Voltage [V]
C
,Drain-Source Voltage[V]
0.1
C
C
I
oss
D
iss
rss
, Drain Current [A]
V
GS
V
100
GS
= 4.5V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
10
= 10V
0
* Notes :
150
1. 250
2. T
* Note : T
C
V
= 25
μ
(
GS
s Pulse Test
C ds = shorted
* Note:
=
o
200
C
1. V
2. f = 1MHz
10.0 V
J
7.0 V
5.0 V
3.5 V
3.0 V
2.5 V
= 25
GS
10
= 0V
1
o
)
C
250
1
20
3
1000
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
100
400
100
Figure 6. Gate Charge Characteristics
10
10
10
1
1
8
6
4
2
0
0.3
0
0
V
SD
Variation vs. Source Current
and Temperatue
, Body Diode Forward Voltage [V]
V
100
Q
GS
150
150
V
V
V
g
,Gate-Source Voltage[V]
DS
DS
DS
, Total Gate Charge [nC]
0.6
o
2
o
C
C
= 25V
= 20V
= 15V
200
-55
* Notes :
o
C
25
1. V
2. 250
25
Notes:
1. V
2. 250
o
* Note : I
C
o
DS
4
0.9
C
μ
GS
= 20V
s Pulse Test
μ
300
= 0V
s Pulse Test
D
= 80A
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6
1.2
400