FDP8440 Fairchild Semiconductor, FDP8440 Datasheet - Page 4

• Manufacturer Part Number: FDP8440
• Description: MOSFET N-CH 40V 100A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8440

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 450nC @ 10V
• Input Capacitance (ciss) @ Vds: 24740pF @ 25V
• Power - Max: 306W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 277 A
• Power Dissipation: 306000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8440 Rev. A6
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Unclamped Inductive Switching
100
1.2
1.1
1.0
0.9
0.8
200
10
-100
1
0.01
Capability
-50
0.1
T
vs. Temperature
J
T
t
, Junction Temperature
J
AV
= 150
0.001
, TIME IN AVALANCHE(ms)
0.01
0.1
0
1
1
o
10
C
0.5
0.05
0.2
0.02
0.01
-5
0.1
Single pulse
50
10
Figure 11. Transient Thermal Response Curve
T
J
= 25
100
100
o
C
10
* Notes :
1. V
2. I
[
-4
o
C
D
150
1000
GS
]
= 250
= 0V
Rectangular Pulse Duration [sec]
μ
A
10000
200
10
(Continued)
-3
4
10
3000
1000
Figure 8. On-Resistance Variation
-2
Figure 10. Safe Operating Area
100
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
-100
1
* Notes :
1
1. Z
2. Duty Factor, D=t
3. T
Operation in This Area
is Limited by R
P
θ
JM
DM
JC
-50
(t) = 0.49
- T
vs. Temperature
10
T
C
V
J
= P
, Junction Temperature
-1
t
*Notes:
DS
1
t
2
DM
1. T
2. T
3. Single Pulse
, Drain-Source Voltage [V]
o
C/W Max.
0
DS(on)
* Z
C
J
1
= 175
/t
= 25
θ
2
JC
(t)
o
o
C
50
C
10
0
10
100
100ms
* Notes :
[
1. V
2. I
o
10ms
100
C
1ms
D
150
]
GS
= 80A
μ
www.fairchildsemi.com
s
= 10V
200