BSD316SN L6327 Infineon Technologies, BSD316SN L6327 Datasheet - Page 5

• Manufacturer Part Number: BSD316SN L6327
• Description: MOSFET N-CH 30V 1.4A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD316SN L6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 2V @ 3.7µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 94pF @ 15V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD316SN L6327; BSD316SN L6327INTR; SP000442462

Rev 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
4
3
2
1
0
DS
GS
4
3
2
1
0
0
); T
0
); |V
10 V
j
=25 °C
GS
DS
|>2|I
1
4.5 V
D
|R
1
DS(on)max
2
V
V
DS
150 °C
GS
[V]
[V]
3
2
25 °C
2.8 V
3.5 V
3 V
4 V
4
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
400
350
300
250
200
150
100
6
4
2
0
D
=f(I
50
); T
0
0
0
D
j
); T
=25 °C
3.5 V
GS
j
=25 °C
2
1
4 V
I
D
I
D
4
[A]
2
[A]
5 V
4.5 V
7 V
10 V
6
BSD316SN
3
2011-07-14
8
4