BSD316SN L6327 Infineon Technologies, BSD316SN L6327 Datasheet - Page 6

• Manufacturer Part Number: BSD316SN L6327
• Description: MOSFET N-CH 30V 1.4A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD316SN L6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 2V @ 3.7µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 94pF @ 15V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD316SN L6327; BSD316SN L6327INTR; SP000442462

Rev 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
320
280
240
200
160
120
DS
=f(T
80
40
2
1
0
0
); V
-60
0
j
); I
GS
D
=0 V; f =1 MHz; T
=1.4 A; V
-20
5
20
GS
98 %
V
=10 V
T
DS
j
10
[°C]
[V]
60
j
typ
Coss
Ciss
=25°C
Crss
100
15
140
page 6
20
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
2.8
2.4
1.6
1.2
0.8
0.4
10
10
=f(T
SD
2
0
-1
-2
-3
1
0
-60
)
0
j
); V
D
j
DS
-20
=V
0.4
GS
150 °C
; I
20
D
=3.7 µA
25 °C
V
T
2 %
SD
j
typ
0.8
[°C]
[V]
60
98 %
150 °C, 98%
25 °C, 98%
100
1.2
BSD316SN
140
2011-07-14
1.6