AO4435 Alpha & Omega Semiconductor Inc, AO4435 Datasheet - Page 4

• Manufacturer Part Number: AO4435
• Description: MOSFET P-CH -30V -10.5A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1030-2

AO4435
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
0.001
0.01
100
8
6
4
2
0
0.01
0.1
10
0.1
10
0.00001
1
0
1
0.1
R
T
T
DS(ON)
Figure 9: Maximum Forward Biased Safe
J(Max)
A
=25°C
Figure 7: Gate-Charge Characteristics
=150°C
limited
D=T
T
R
J,PK
5
θJA
0.0001
Operating Area (Note E)
V
I
D
=75°C/W
on
DS
=-10A
=T
/T
=-15V
A
1
+P
DM
-V
Q
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
.Z
DS
g
10
θJA
(nC)
(Volts)
Single Pulse
.R
0.001
θJA
10
15
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
10µs
100µs
1ms
10ms
100ms
DC
10s
100
Pulse Width (s)
20
0.1
1000
2000
1500
1000
100
500
10
0.00001
1
0
0
Figure 10: Single Pulse Power Rating Junction-
C
rss
1
Figure 8: Capacitance Characteristics
5
C
P
oss
0.001
D
T
to-Ambient (Note E)
on
10
10
Pulse Width (s)
T
-V
DS
0.1
15
(Volts)
100
C
T
T
20
iss
J(Max)
A
=25°C
10
=150°C
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25
1000
1000
30