AO4433 Alpha & Omega Semiconductor Inc, AO4433 Datasheet - Page 4

• Manufacturer Part Number: AO4433
• Description: MOSFET P-CH -30V -11A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4433

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 15V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1029-2

AO4433
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10.0
1.0
0.1
10
8
6
4
2
0
0.01
0.1
0.1
0
10
0.00001
1
T
T
R
limited
Figure 9: Maximum Forward Biased Safe
J(Max)
A
DS(ON)
=25°C
Figure 7: Gate-Charge Characteristics
5
=150°C
D=T
T
R
J,PK
θJA
Operating Area (Note E)
=75°C/W
on
10
=T
V
I
0.0001
1s
D
/T
DS
=-11A
A
1
+P
=-15V
10s
DM
-V
15
-Q
.Z
DS
g
θJA
(Volts)
(nC)
.R
DC
Figure 11: Normalized Maximum Transient Thermal Impedance
20
0.1s
θJA
0.001
1ms
10ms
100µs
10
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
30
10µs
0.01
Single Pulse
100
35
Pulse Width (s)
0.1
1000
2500
2000
1500
1000
100
500
10
0.00001
1
0
0
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
1
Figure 8: Capacitance Characteristics
C
5
0.001
oss
P
D
T
on
10
10
Pulse Width (s)
T
-V
C
DS
rss
0.1
C
15
(Volts)
iss
T
T
J(Max)
A
=25°C
100
20
=150°C
10
www.aosmd.com
25
1000
1000
30