IPD30N03S4L-14 Infineon Technologies, IPD30N03S4L-14 Datasheet - Page 7

• Manufacturer Part Number: IPD30N03S4L-14
• Description: MOSFET N-CH 30V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N03S4L-14

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.2V @ 10µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 31W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.6 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 1 V
• Continuous Drain Current: 30 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPD30N03S4L-14; IPD30N03S4L-14TR; SP000275919

Rev. 2.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
70
60
50
40
30
20
10
0
10
9
8
7
6
5
4
3
2
1
0
25
0
j
)
gate
30 A
15 A
7.5 A
D
); I
DD
2
D
= 30 A pulsed
75
4
Q
T
gate
j
[°C]
6
[nC]
125
6 V
8
10
24 V
175
12
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
34
33
32
31
30
29
28
V
g (th)
g s(th)
-55
GS
= f(T
j
); I
Q
-15
g s
D
= 1 mA
25
Q
T
g
j
Q
[°C]
65
sw
Q
g d
IPD30N03S4L-14
105
2008-04-18
145
Q
gate