IPD60R950C6 Infineon Technologies, IPD60R950C6 Datasheet - Page 10

• Manufacturer Part Number: IPD60R950C6
• Description: MOSFET N-CH 600V 4.4A TO252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPD60R950C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 3.5V @ 130µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 100V
• Power - Max: 37W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.86ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 0.86 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO252-3
• Vds (max): 600.0 V
• Package: DPAK (TO-252)
• Rds(on) @ Tj=25°c Vgs=10: 950.0 mOhm
• Id(max) @ Tc=25°c: 4.4 A
• Idpuls (max): 12.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD60R950C6INTR

FinalData Sheet
Table 14
Table 15
Typ. output characteristics T
I
Typ. drain-source on-state resistance
R
D
DS(on)
=f(V
DS
=f(I
); T
D
); T
j
=25 °C; parameter: V
j
=125 °C; parameter: V
j
=25 °C
GS
GS
10
Typ. output characteristics T
I
Drain-source on-state resistance
R
D
DS(on)
=f(V
DS
600V CoolMOS™ C6 Power Transistor
=f(T
); T
j
); I
j
=125 °C; parameter: V
D
=1.5A; V
Electrical characteristics diagrams
GS
=10 V
j
=125 °C
Rev. 2.1, 2010-03-11
GS
IPx60R950C6