IPD60R950C6 Infineon Technologies, IPD60R950C6 Datasheet - Page 4

• Manufacturer Part Number: IPD60R950C6
• Description: MOSFET N-CH 600V 4.4A TO252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPD60R950C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 3.5V @ 130µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 100V
• Power - Max: 37W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.86ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 0.86 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO252-3
• Vds (max): 600.0 V
• Package: DPAK (TO-252)
• Rds(on) @ Tj=25°c Vgs=10: 950.0 mOhm
• Id(max) @ Tc=25°c: 4.4 A
• Idpuls (max): 12.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD60R950C6INTR

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation for 
TO-220, TO-252, TO-263
Power dissipation for 
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220
TO-220FP
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
speed
1) Limited by
2) Pulse width
3) Identical low side and high side switch with identical
FinalData Sheet
T
j
= 25 °C, unless otherwise specified.
3)
Maximum Ratings
Maximum ratings
T
j,max.
t
p
limited by
Maximum duty cycle D=0.75
2)
3)
2)
1)
T
j,max
Symbol
I
I
E
E
I
dv/dt
V
P
P
T
I
I
dv/dt
di
D
D,pulse
AR
S
S,pulse
j
AS
AR
GS
tot
tot
,T
f
/dt
stg
R
Min.
-
-
-
-
-
-
-20
-30
-
-
-55
-
-
-
-
G
4
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
600V CoolMOS™ C6 Power Transistor
4.4
2.8
12
46
0.13
0.8
50
20
30
37
26
150
60
50
3.9
12
15
500
Unit
A
A
mJ
A
V/ns
V
W
W
°C
Ncm M3 and M3.5 screws
A
A
V/ns
A/µs
Note / Test Condition
T
T
T
I
(see table 21)
I
V
static
AC (f>1 Hz)
T
T
M2.5 screws
T
T
V
T
(see table 22)
D
D
C
C
C
C
C
C
C
j
DS
DS
=0.8 A,V
=0.8 A,V
=125 °C
= 25 °C
= 100°C
=25 °C
=25 °C
=25 °C
=25 °C
=25 °C
=0...480 V
=0...480 V, I
Rev. 2.1, 2010-03-11
Maximum Ratings
IPx60R950C6
DD
DD
=50 V
=50 V
SD

I
D
,