IPS135N03L G Infineon Technologies, IPS135N03L G Datasheet - Page 3

• Manufacturer Part Number: IPS135N03L G
• Description: MOSFET N-CH 30V 30A TO251-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPS135N03L G

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Power - Max: 31W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0135 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 31000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 11.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-251
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPS135N03LGIN; IPS135N03LGXK; SP000257455; SP000788220

Rev. 1.04
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
DS
GS
DD
GS
R
=30 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 4.5 V
=15 V, I
=0 to 10 V
=0 to 4.5 V
=15 V, V
=0 V, I
F
F
G
DS
=30 A,
=I
D
D
=1.6 Ω
GS
GS
=30 A,
=30 A,
=15 V,
S
=10 V,
=0 V
,
IPS135N03L G
IPD135N03L G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.98
typ.
770
350
3.0
3.0
2.2
2.7
1.2
1.2
2.6
4.8
3.5
4.2
16
12
10
9
-
-
-
IPU135N03L G
IPF135N03L G
max.
1000
470
210
6.4
5.5
1.2
25
10
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-04-15