IPS135N03L G Infineon Technologies, IPS135N03L G Datasheet - Page 8

• Manufacturer Part Number: IPS135N03L G
• Description: MOSFET N-CH 30V 30A TO251-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPS135N03L G

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Power - Max: 31W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0135 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 31000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 11.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-251
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPS135N03LGIN; IPS135N03LGXK; SP000257455; SP000788220

IPD135N03L G
IPF135N03L G
IPS135N03L G
IPU135N03L G
Package Outline
PG-TO252-3
Rev. 1.04
page 8
2008-04-15