SPD50P03L G Infineon Technologies, SPD50P03L G Datasheet

MOSFET P-CH 30V 50A TO-252

SPD50P03L G

Manufacturer Part Number
SPD50P03L G
Description
MOSFET P-CH 30V 50A TO-252
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPD50P03L G

Package / Case
DPak, TO-252 (4 leads + tab)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
6880pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
104 ns
Rise Time
21.7 ns
Package
DPAK 5pin (TO-252 5pin)
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
7.0 mOhm
Rds (on) (max) (@4.5v)
125.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000086729
SP000371908
SPD50P03L G
SPD50P03LGINTR
SPD50P03LGXT
Rev. 1.8
Type
SPD50P03L G
OptiMOS
Features
• P-Channel
• Enhancement mode
• Logic level
• 175°C operating temperature
• Avalanche rated
• dv /dt rated
• High current rating
• Pb-free lead-plating, RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Package
PG-TO252-5
®
-P Power-Transistor
j
=25 °C, unless otherwise specified
Marking
50P03L
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
page 1
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
D
D
C
C
C
j,max
C
=-50 A, R
=-50 A, V
=25 °C
=100 °C
=25 °C
=25 °C
1000 pcs / reel
Tape and reel information
=175 °C
1)
1)
DS
GS
Product Summary
V
R
I
=24 V,
=25 Ω
D
DS
DS(on),max
PG-TO252-5
-55…+175
55/175/56
Value
-200
256
±20
150
260
-50
-50
1C
-6
Lead Free
Yes
SPD50P03L G
2008-07-10
-50
-30
7
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
Packing
Non dry

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SPD50P03L G Summary of contents

Page 1

... =25 °C D,pulse =- =- /dt di /dt =-200 A/µs, T =175 °C j,max =25 °C tot stg page 1 SPD50P03L G Product Summary V - DS(on),max I -50 D PG-TO252-5 Lead Free Yes Value -50 -50 -200 =25 Ω 256 = ±20 150 -55…+175 1C 260 55/175/56 2008-07-10 V mΩ A Packing Non dry ...

Page 2

... GS T =175 ° =- GSS =-4 DS(on =-50 A DS(on |>2 DS(on)max =- K/W the chip is able to carry 123 A. thJC 2 (one layer, 70 µm thick) copper area for drain page 2 SPD50P03L G Values Unit min. typ. max -0.1 -1 µA - -10 -100 - -10 -100 nA - 8.5 12.5 mΩ - 5.7 7.0 , ...

Page 3

... Symbol Conditions C iss oss V =- MHz DS C rss t d(on Ω R d(off =- =- =- =- - =- =-50 A plateau =25 ° S,pulse = =25 ° =- =| /dt =100 A/µ page 3 SPD50P03L G Values min. typ. max. - 4590 6880 - 1220 1830 - 1000 1500 - 14 21 139 208 - 104 156 - -14 -19 - -35 -53 - -95 -126 - -3 - -200 - -1 -1. Unit 2008-07-10 ...

Page 4

... Rev. 1.8 2 Drain current I =f 120 160 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µ 100 µ [V] DS page 4 SPD50P03L G |≥ 120 160 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 -1 10 2008-07-10 ...

Page 5

... V 140 120 100 Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.8 6 Typ. drain-source on resistance R =f(I DS(on) parameter - Typ. forward transconductance g =f 100 C ° °175 [V] GS page 5 SPD50P03L =25 ° -4 120 160 -I [A] D =25 ° [A] D 200 60 2008-07-10 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 Coss Crss [V] DS page 6 SPD50P03L SPD50P03L G =-250 µ 98%. typ 100 140 T [° °C, typ 175 °C, typ 25 °C, 98% 175 °C, 98% 0 0 [V] SD 180 2 ...

Page 7

... Drain-source breakdown voltage =-250 µ BR(DSS -60 - Rev. 1.8 14 Typ. gate charge V =f(Q GS parameter ° °100 8 C °150 100 1000 [µ Gate charge waveforms s(th) Q g(th) 100 140 180 [°C] j page 7 SPD50P03L =-50 A pulsed gate 15 100 -Q [nC] gate 120 Q g ate 2008-07-10 ...

Page 8

... Package Outline PG-TO252-5: Outline Footprint Dimensions in mm Rev. 1.8 Packaging Tape page 8 SPD50P03L G 2008-07-10 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.8 page 9 SPD50P03L SPD50P03L G 2008-07-10 ...

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