IPB034N03L G Infineon Technologies, IPB034N03L G Datasheet - Page 5

• Manufacturer Part Number: IPB034N03L G
• Description: MOSFET N-CH 30V 80A TO-263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB034N03L G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 15V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0034 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 94000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB034N03LGINTR; IPB034N03LGXT; SP000304126

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
160
120
160
120
80
40
80
40
DS
GS
0
0
0
0
); T
); |V
10 V
j
=25 ° C
DS
j
GS
5 V
|>2|I
1
4.5 V
4 V
D
|R
1
DS(on)max
2
175 ° C
V
V
DS
GS
[V]
[V]
25 ° C
3
2
4
2.8 V
3.5 V
3.2 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
160
120
16
12
80
40
D
=f(I
8
4
0
0
); T
0
0
D
j
); T
=25 ° C
GS
j
3 V
=25 ° C
20
20
3.2 V
40
40
I
I
D
D
[A]
[A]
3.5 V
60
60
IPB034N03L G
IPP034N03L G
4 V
10 V
11.5 V
80
4.5 V
80
5 V
2010-02-19
100
100