IPD70N10S3-12 Infineon Technologies, IPD70N10S3-12 Datasheet - Page 3

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IPD70N10S3-12

Manufacturer Part Number
IPD70N10S3-12
Description
MOSFET N-CH 100V 70A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD70N10S3-12

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.1 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
4355pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0111 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD70N10S3-12
IPD70N10S3-12TR
SP000427248

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD70N10S3-12
Manufacturer:
FSC
Quantity:
12 400
Part Number:
IPD70N10S3-12
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPD70N10S3-12
0
Rev. 1.0
1)
2)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
1)
1)
1)
1)
1)
1)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1MHz
V
I
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
GS
R
=70A, R
=25°C
F
page 3
=25°C
=50V, I
/dt =100A/µs
=0V, V
=20V, V
=80V, I
=0 to 10V
=0V, I
Conditions
F
F
G
DS
=70A,
2
=I
D
=3.5
GS
=70A,
(one layer, 70 µm thick) copper area for drain
=25V,
S
=10V,
,
min.
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3350
typ.
940
105
100
265
5.5
17
25
18
16
51
8
8
1
-
-
IPD70N10S3-12
max.
4355
1222
158
280
1.2
23
24
65
70
-
-
-
-
-
-
-
2008-04-22
Unit
pF
ns
nC
V
A
V
ns
nC

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