NDS9405 Fairchild Semiconductor, NDS9405 Datasheet - Page 5

• Manufacturer Part Number: NDS9405
• Description: MOSFET P-CH 20V 4.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9405

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1425pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9405TR

Typical Electrical Characteristics
V
GS
2500
2000
1500
1000
500
300
Figure 9. Capacitance Characteristics
Figure 11. Switching Test Circuit
0.1
1.15
1.05
0.95
1.1
0.9
1
-50
R
0.2
f = 1 MHz
V
GEN
I
Figure 7. Breakdown Voltage
D
GS
Variation with Temperature.
-25
= - 2 5 0 µ A
= 0V
-V
DS
V
T
0.5
, DRAIN TO SOURCE VOLTAGE (V)
0
J
IN
G
, JUNCTION TEMPERATURE (°C)
25
1
-V
D
50
S
2
DD
R
7 5
L
.
D U T
5
1 0 0
(continued)
.
C iss
1 0
1 2 5
C oss
V
C rss
O U T
1 5 0
20
V
V
Figure 8. Body Diode Forward Voltage Variation with
t
OUT
d(on)
IN
0.01
1 0
0.1
Figure 10. Gate Charge Characteristics.
20
10
8
6
4
2
0
1 0 %
5
2
1
Figure 12. Switching Waveforms.
0
0
I
T = 125°C
D
V
J
GS
= -4.3A
= 0V
t
o n
5 0 %
-V
1 0 %
SD
0.5
, BODY DIODE FORWARD VOLTAGE (V)
1 0
25°C
Source Current and Temperature.
t
9 0 %
PULSE W IDTH
r
Q
g
, GATE CHARGE (nC)
-55°C
1
t
2 0
d(off)
5 0 %
V
DS
1.5
= -5V
9 0 %
3 0
t
1 0 %
off
9 0 %
NDS9405.SAM
INVERTED
t
-10V
2
-15V
f
4 0