NDS9405 Fairchild Semiconductor, NDS9405 Datasheet - Page 6

• Manufacturer Part Number: NDS9405
• Description: MOSFET P-CH 20V 4.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9405

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1425pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9405TR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
1 6
1 2
8
4
0
0
0 .0 0 5
0 .0 0 2
0 .0 0 1
0 .0 5
0 .0 2
0 .0 1
Current and Temperature
0 .5
0 .2
0 .1
0 .0001
1
V
DS
= -15V
-4
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
D = 0.5
I , DRAIN CURRENT (A)
0.2
D
depending on the circuit board design.
0.1
0.05
-8
0 .001
0.02
0.01
Single Pulse
-12
T = -55°C
.
J
25°C
125°C
0 .0 1
(continued)
-16
-20
t , TIME (sec)
0 .1
1
Figure 14. Maximum Safe Operating Area.
0.03
0.01
0.3
0.1
3 0
1 0
3
1
0.1
.
SINGLE PULSE
0.2
V
T
1
A
GS
= 25°C
= -20V
- V
0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
P(pk)
1
T - T
Duty Cycle, D = t
1 0
R
J
R
JA
2
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
5
JA
1
/ t
JA
(t)
1 0 0
2
1 0
2 0
3 0 0
NDS9405.SAM
3 0