BSC079N03SG Infineon Technologies, BSC079N03SG Datasheet
BSC079N03SG
Specifications of BSC079N03SG
BSC079N03SGXT
BSC079N03SGXTINTR
BSC079N03SGXTINTR
SP000016414
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BSC079N03SG Summary of contents
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OptiMOS™2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC • N-channel; Logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • Superior ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 ...
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Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics I =f ...
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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 125 ° Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline PG-TDSON-8: Outline Rev. 1.91 PG-TDSON-8 page 8 BSC079N03S G 2009-10-27 ...
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Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.91 page 9 BSC079N03S G 2009-10-27 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...