FDS4435BZ Fairchild Semiconductor, FDS4435BZ Datasheet

MOSFET P-CH 30V 8.8A 8-SOIC

FDS4435BZ

Manufacturer Part Number
FDS4435BZ
Description
MOSFET P-CH 30V 8.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4435BZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1845pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
8.8 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
38 ns
Rise Time
13 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4435BZTR

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©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDS4435BZ
P-Channel PowerTrench
-30V, -8.8A, 20m:
Features
„ Max r
„ Max r
„ Extended V
„ HBM ESD protection level of ±3.8KV typical (note 3)
„ High performance trench technology for extremely low r
„ High power and current handling capability
„ Termination is Lead-free and RoHS compliant
V
V
I
P
E
T
R
R
D
J
DS
GS
D
AS
TJC
TJA
, T
Symbol
Device Marking
STG
FDS4435BZ
DS(on)
DS(on)
GSS
= 20m: at V
= 35m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
range (-25V) for battery applications
D
SO-8
Pin 1
D
GS
GS
= -10V, I
= -4.5V, I
D
FDS4435BZ
-Pulsed
Device
D
D
D
= -8.8A
= -6.7A
S
T
®
A
S
= 25°C unless otherwise noted
MOSFET
S
Parameter
G
Package
DS(on)
SO-8
1
T
T
T
A
A
General Description
This
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
A
= 25°C
= 25°C
= 25°C
P-Channel
D
D
D
D
Reel Size
5
6
7
8
13’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
MOSFET
Tape Width
is
12mm
-55 to +150
produced
Ratings
±25
-8.8
-30
-50
2.5
1.0
24
25
50
4
3
2
1
®
G
S
S
S
process that has
using
April 2009
www.fairchildsemi.com
2500units
Quantity
Fairchild
Units
°C/W
mJ
°C
W
V
V
A

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FDS4435BZ Summary of contents

Page 1

... Thermal Resistance, Junction to Case TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device FDS4435BZ FDS4435BZ ©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 ® MOSFET General Description = -8.8A This P-Channel D = -6.7A Semiconductor’s advanced PowerTrench D been especially tailored to minimize the on-state resistance. ...

Page 2

... Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting T = 25° 1mH -7A ©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev. 25°C unless otherwise noted J Test Conditions I = -250PA -250PA, referenced to 25° ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 50 P PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev. 25°C unless otherwise noted J = -10V = - -4. - -3. PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 100 125 150 0.01 ...

Page 4

... J 1 0.01 0 TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability -4. C AMBIENT TEMPERATURE ( T A Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev. 25°C unless otherwise noted J 4000 = -10V 1000 V = -20V Figure 10 -10V GS 0.01 100 125 150 iss ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - ©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev. 25°C unless otherwise noted PULSE WIDTH (s) SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve ...

Page 6

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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