FDS4435BZ Fairchild Semiconductor, FDS4435BZ Datasheet - Page 5

• Manufacturer Part Number: FDS4435BZ
• Description: MOSFET P-CH 30V 8.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4435BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1845pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 38 ns
• Rise Time: 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4435BZTR

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
Typical Characteristics
1000
0.001
100
0.01
0.5
10
0.1
10
1
2
1
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
10
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
T
Figure 14. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
10
-2
-2
SINGLE PULSE
R
T
JA
= 125
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (s)
o
C/W
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
V
10
GS
= -10 V
J
= P
DM
x Z
P
TJA
DM
100
SINGLE PULSE
R
T
1
/t
100
x R
A
T
2
JA
= 25
TJA
= 125
t
1
+ T
o
C
t
2
A
o
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C/W
1000
1000