SPB08P06P G Infineon Technologies, SPB08P06P G Datasheet - Page 4

• Manufacturer Part Number: SPB08P06P G
• Description: MOSFET P-CH 60V 8.8A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB08P06P G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: D2PAK (TO-263)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 230.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000102179; SPB08P06P G; SPB08P06PGINTR; SPB08P06PGXT

Rev 1.5
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
50
40
30
20
10
DS
0
-1
-2
2
1
0
A
10
0
); T
)
-1
limited by on-state
resistance
A
p
=25 °C; D =0
40
10
0
T
-V
A
DS
80
[°C]
[V]
10
DC
1
120
10 ms
100 ms
1 ms
100 µs
10 µs
160
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
10
10
10
A
8
6
4
2
0
-1
1
0
); |V
10
p
0
)
0.02
0.01
-5
0.05
0.1
0.2
single pulse
0.5
GS
10
|≥10 V
p
-4
/T
40
10
-3
80
10
T
-2
t
A
p
[°C]
[s]
10
-1
120
SPB08P06P G
10
0
160
10
1
2008-07-09
10
2