SPB08P06P G Infineon Technologies, SPB08P06P G Datasheet - Page 5

• Manufacturer Part Number: SPB08P06P G
• Description: MOSFET P-CH 60V 8.8A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB08P06P G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: D2PAK (TO-263)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 230.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000102179; SPB08P06P G; SPB08P06PGINTR; SPB08P06PGXT

Rev 1.5
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
20
18
16
14
12
10
DS
GS
8
6
4
2
0
8
6
4
2
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
2
D
-20 V
|R
2
DS(on)max
-V
-V
-10 V
4
-4 V
DS
GS
125 °C
-5 V
-4.5 V
3
-5.5 V
-6 V
[V]
[V]
-7 V
6
4
25 °C
5
8
page 5
6
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
1000
900
800
700
600
500
400
300
200
100
D
=f(I
0
6
5
4
3
2
1
0
); T
-4 V
0
0
D
-4.5 V
j
); T
=25 °C
GS
2
j
=25 °C
-5 V
2
4
-5.5 V
6
4
-6 V
-I
8
-I
D
D
[A]
[A]
10
6
12
-10 V
SPB08P06P G
14
8
-37V
-20 V
16
2008-07-09
18
10