FDB3502 Fairchild Semiconductor, FDB3502 Datasheet
FDB3502
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FDB3502 Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDB3502 FDB3502 ©2008 Fairchild Semiconductor Corporation FDB3502 Rev.C2 ® MOSFET General Description = 6A This N-Channel D Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...
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... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ° 3: Starting 3mH 6A 75V ©2008 Fairchild Semiconductor Corporation FDB3502 Rev. 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25° 0V 60V, ...
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... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 40 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDB3502 Rev. 25°C unless otherwise noted J 3 2.5 µ 1 150 120 ...
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... Switching Capability 100 10 THIS AREA IS LIMITED DS(on) SINGLE PULSE T = MAX RATED C/W θ 0.05 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDB3502 Rev. 25°C unless otherwise noted J 1000 V = 40V 50V DD 100 Figure 10 100us ...
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... SINGLE PULSE R 0. DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - ©2008 Fairchild Semiconductor Corporation FDB3502 Rev. 25°C unless otherwise noted C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve SINGLE PULSE 62.5 C/W θ ...
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... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDB3502 Rev.C2 FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...