FDB3502 Fairchild Semiconductor, FDB3502 Datasheet - Page 5

• Manufacturer Part Number: FDB3502
• Description: MOSFET N-CH 75V 6A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB3502

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 815pF @ 40V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB3502TR

©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
Typical Characteristics
0.001
0.01
0.01
0.1
0.1
1
2
2
1
10
10
-5
-4
DUTY CYCLE-DESCENDING ORDER
DUTY CYCLE-DESCENDING ORDER
D = 0.5
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
10
-3
SINGLE PULSE
R
10
θ
JC
-4
T
Figure 13. Transient Thermal Response Curve
Figure 14.
SINGLE PULSE
R
(
= 3
J
Note 1b
θ
JA
= 25°C unless otherwise noted
o
C/W
= 62.5
10
)
-2
o
C/W
Transient Thermal Response Curve
t, RECTANGULAR PULSE DURATION (sec)
t, RECTANGULAR PULSE DURATION (sec)
10
-3
10
-1
5
1
10
-2
NOTES:
DUTY FACTOR: D = t
PEAK T
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
J
= P
= P
DM
DM
x Z
x Z
10
P
P
θJc
θJA
DM
DM
-1
1
1
/t
x R
/t
x R
2
2
θJc
θJA
100
t
t
1
+ T
1
+ T
t
t
2
2
C
A
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1