AOT460 Alpha & Omega Semiconductor Inc, AOT460 Datasheet

MOSFET N-CH 60V 85A TO-220

AOT460

Manufacturer Part Number
AOT460
Description
MOSFET N-CH 60V 85A TO-220
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOT460

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
88nC @ 10V
Input Capacitance (ciss) @ Vds
4560pF @ 30V
Power - Max
268W
Mounting Type
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1146-1
785-1146-1
785-1146-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AOT460
Manufacturer:
AOS
Quantity:
50
Part Number:
AOT460
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AOT460/L uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in UPS, high
current switching applications.
AOT460and AOT460L are electrically identical.
AOT460
N-Channel Enhancement Mode Field Effect Transistor
-RoHS Compliant
-Halogen Free
G
B
C
C
Top View
T
T
T
T
C
C
C
C
=25°C
=100°C
=25°C
=100°C
B
DS(ON)
A
D
A
=25°C unless otherwise noted
TO220
G
with low gate
D
Bottom View
C
Steady-State
Steady-State
S
Symbol
V
V
I
I
I
E
P
T
D
DM
AR
J
DS
GS
AR
D
, T
STG
S
D
Symbol
G
Features
V
I
R
R
R
D
DS
DS(ON)
θJA
θJC
= 85 A
(V) = 60V
< 7.5mΩ (V
Maximum
-55 to 175
G
0.45
±20
340
320
268
134
Typ
60
85
85
80
45
(V
100% UIS Tested!
D
S
GS
GS
= 10V)
= 10V)
Max
0.56
60
www.aosmd.com
Units
Units
°C/W
°C/W
mJ
°C
W
V
V
A
A

Related parts for AOT460

AOT460 Summary of contents

Page 1

... AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT460/L uses advanced trench technology and design to provide excellent R DS(ON) charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. -RoHS Compliant -Halogen Free Top View ...

Page 2

... AOT460 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Transconductance FS V Diode Forward Voltage ...

Page 3

... AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 10V 8V 200 150 5V 100 (Volts) DS Figure 1: On-Region Characteristics 7.2 7 6.8 V =10V GS 6.6 6.4 6 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 100 4. = 2.2 2 1.8 1 ...

Page 4

... AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =30V DS I =30A (nC) g Figure 7: Gate-Charge Characteristics 1000 100 R DS(ON) limited 10 T =175°C J(Max) T =25° (V) DS Figure 9: Maximun Forward Biased Safe Operating Area (Note θJC J, =0.45°C/W θJC 1 0.1 Single Pulse ...

Page 5

... AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 250 200 150 100 100 T (°C) CASE Figure 13: Power De-rating (Note B) 150 125 100 75 T =150° 0.000001 0.00001 Time in avalanche, t Figure 10: Single Pulse Avalanche capability Alpha & Omega Semiconductor, Ltd. 100 125 150 ...

Page 6

... AOT460 + VDC - Vgs Ig Vds Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & W aveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms ...

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