FDMS8670 Fairchild Semiconductor, FDMS8670 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single FDMS8670
Manufacturer Part Number
FDMS8670
Description
MOSFET N-CH 30V 24A POWER56
Manufacturer
Fairchild Semiconductor
Specifications of FDMS8670
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.6 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
3940pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
78000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
FAIRCHILD/仙童
Manufacturer:
FAIRCHILD/仙童
©2009 Fairchild Semiconductor Corporation
FDMS8670 Rev.C1
FDMS8670
N-Channel Power Trench
30V, 42A, 2.6m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
Max r
Max r
100% UIL Tested
RoHS Compliant
, T
JC
JA
Symbol
Device Marking
STG
FDMS8670
DS(on)
DS(on)
= 2.6m at V
= 3.8m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
Power 56
= 10V, I
= 4.5V, I
FDMS8670
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 24A
= 18A
D
T
D
A
®
D
= 25°C unless otherwise noted
MOSFET
D
Parameter
Bottom
Power 56
Package
S
S
1
S
T
T
T
T
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's latest proprietary Power Trench
has been especially tailored to minimize on-resistance. This part
exhibits industry leading switching FOM (RDS*Qgd) to enhance
DC-DC synchronous rectifier efficiency.
Application
A
C
C
A
C
Pin 1
G
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
DC - DC Conversion
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
6
7
8
5
Tape Width
12 mm
-55 to +150
Ratings
288
±20
135
150
2.5
1.6
30
42
24
78
50
www.fairchildsemi.com
®
May 2009
3
4
2
1
3000 units
Quantity
process that
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A
tm
Related parts for FDMS8670
FDMS8670 Summary of contents
... JC R Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device FDMS8670 FDMS8670 ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev.C1 ® MOSFET General Description = 24A This N-Channel MOSFET is produced using Fairchild D Semiconductor's latest proprietary Power Trench = 18A D has been especially tailored to minimize on-resistance. This part exhibits industry leading switching FOM (RDS*Qgd) to enhance DC-DC synchronous rectifier efficiency ...
... NOTES determined with the device mounted on a 1in JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ° 3. Starting 1mH 24A ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev. 25°C unless otherwise noted J Test Conditions I = 250 250 A, referenced to 25° 0V, V ...
... T J Figure 3. Normalized On- Resistance vs Junction Temperature 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 120 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev 25°C unless otherwise noted J 4 3.5V GS 3.5 3.0 2.5 2.0 1 1.0 0 100 125 150 ...
... THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev. 25°C unless otherwise noted J 8000 1000 V = 20V DD 100 150 120 100 800 Figure 10. ...
... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev. 25°C unless otherwise noted J SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK T ...
... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev.C1 6 www.fairchildsemi.com ...
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev.C1 F-PFS™ PowerTrench ® PowerXS™ FRFET SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...
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