FDMS8670 Fairchild Semiconductor, FDMS8670 Datasheet - Page 4

• Manufacturer Part Number: FDMS8670
• Description: MOSFET N-CH 30V 24A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS8670

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3940pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 78000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS8670TR

©2009 Fairchild Semiconductor Corporation
FDMS8670 Rev.C1
Typical Characteristics
0.01
400
100
0.1
10
10
40
10
1
Figure 7.
0.01
1
0.01
8
6
4
2
0
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
D
Figure 11. Forward Bias Safe
= 24A
V
0.1
Switching Capability
10
DS
SINGLE PULSE
T
R
T
V
Gate Charge Characteristics
J
A
0.1
DD
t
, DRAIN to SOURCE VOLTAGE (V)
JA
AV
= MAX RATED
= 25
Operating Area
Unclamped Inductive
DS(on)
= 10V
, TIME IN AVALANCHE(ms)
= 125
Q
g
o
C
, GATE CHARGE(nC)
T
J
o
20
C/W
V
= 125
1
DD
= 15V
o
1
C
T
V
30
10
J
DD
= 25°C unless otherwise noted
T
J
= 20V
= 25
10
o
C
40
100
100ms
10ms
1ms
1s
10s
DC
100
800
50
4
1000
8000
1000
150
120
100
100
0.5
90
60
30
10
Figure 10.
30
0
1
10
25
0.1
Figure 12.
-3
Figure 8.
Current vs Case Temperature
Limited by Package
f = 1MHz
V
GS
10
V
V
50
-2
= 0V
GS
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
V
, DRAIN TO SOURCE VOLTAGE (V)
T
= 10V
t, PULSE WIDTH (sec)
GS
C
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
10
= 4.5V
-1
75
1
V
GS
1
= 10V
100
R
JC
SINGLE PULSE
R
T
10
A
= 1.6
JA
= 25
o
= 125
C )
o
C/W
o
125
C
www.fairchildsemi.com
10
100
o
C/W
C
C
C
iss
oss
rss
1000
150
30