IPB100N06S3L-04 Infineon Technologies, IPB100N06S3L-04 Datasheet - Page 5

• Manufacturer Part Number: IPB100N06S3L-04
• Description: MOSFET N-CH 55V 100A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N06S3L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 150µA
• Gate Charge (qg) @ Vgs: 362nC @ 10V
• Input Capacitance (ciss) @ Vds: 17270pF @ 25V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N06S3L-04; IPB100N06S3L-04INTR; IPB100N06S3L04XT; SP000102219

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
200
100
200
150
100
50
0
0
DS
GS
0
1
10 V
); T
); V
GS
j
j
DS
= 25 °C
= 4V
6 V
2
2
V
V
DS
GS
4
3
5 V
4.5 V
4 V
3.5 V
3 V
[V]
[V]
6
4
-55 °C
25 °C
175 °C
page 5
8
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
12
10
8
6
4
2
0
6
5
4
3
2
= f(I
= f(T
-60
0
IPI100N06S3L-04, IPP100N06S3L-04
D
j
); T
); I
GS
-20
20
D
j
= 25 °C
= 80 A; V
3.5 V
40
20
GS
T
I
D
j
60
60
= 10 V
[°C]
[A]
IPB100N06S3L-04
100
80
4 V
100
140
2007-11-07
4.5 V
5 V
6 V
10 V
120
180