IPB100N06S3L-04 Infineon Technologies, IPB100N06S3L-04 Datasheet - Page 9

• Manufacturer Part Number: IPB100N06S3L-04
• Description: MOSFET N-CH 55V 100A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N06S3L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 150µA
• Gate Charge (qg) @ Vgs: 362nC @ 10V
• Input Capacitance (ciss) @ Vds: 17270pF @ 25V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N06S3L-04; IPB100N06S3L-04INTR; IPB100N06S3L04XT; SP000102219

Rev. 1.1
Revision History
Version
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Date
page 9
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
07.11.2007
07.11.2007
07.11.2007
07.11.2007
IPI100N06S3L-04, IPP100N06S3L-04
Changes
Removal of ordering code
Implementation of avalanche
current single pulse
Update of Infineon address
Removal of foot note 3, avalanche
diagrams
Implementation of Qrr and trr typ
Update of disclaimer
Implementation of RoHS and AEC
logo, update of feature list
Update of data sheet layout
Adaptation of Ias from 200A to
100A
implementation of footnote 2 for
Eas specification
removal of Vdg specification from
data sheet
IPB100N06S3L-04
2007-11-07