SPB11N60C3 Infineon Technologies, SPB11N60C3 Datasheet - Page 11

• Manufacturer Part Number: SPB11N60C3
• Description: MOSFET N-CH 650V 11A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013519; SPB11N60C3INTR; SPB11N60C3XT; SPB11N60C3XTINTR; SPB11N60C3XTINTR

25 Typ. C
E
Definition of diodes switching characteristics
Rev. 2.6
oss
µJ
=f(V
7.5
5.5
4.5
3.5
2.5
1.5
0.5
6
5
4
3
2
1
0
0
DS
oss
)
100
stored energy
200
300
400
V
V
DS
600
Page 11
SPB11N60C3
2007-12-14