SPB11N60C3 Infineon Technologies, SPB11N60C3 Datasheet - Page 3

• Manufacturer Part Number: SPB11N60C3
• Description: MOSFET N-CH 650V 11A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013519; SPB11N60C3INTR; SPB11N60C3XT; SPB11N60C3XTINTR; SPB11N60C3XTINTR

Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 C
5 C
6 I
Identical low-side and high-side switch.
SD
Rev. 2.6
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=400A/us, V
DClink
=400V, V
5)
6)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
peak
<V
BR, DSS
V
I
V
f=1MHz
V
V
V
I
R
V
V
V
V
D
D
DS
GS
GS
DS
DD
G
DD
DD
GS
DD
=7A
=11A,
Page 3
=6.8Ω
≥2*I
=0V to 480V
=0V, V
=0V,
=380V, V
=480V, I
=480V, I
=0 to 10V
=480V, I
Conditions
, T
D
j
*R
<T
DS
DS(on)max
j,max
D
D
D
GS
=25V,
=11A
=11A,
=11A
=0/10V,
.
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1200
typ.
390
8.3
5.5
5.5
30
45
85
10
44
22
45
*f.
5
5
SPB11N60C3
2007-12-14
max.
70
60
9
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
V
DSS
DSS
.
.