FDB045AN08A0 Fairchild Semiconductor, FDB045AN08A0 Datasheet - Page 4

• Manufacturer Part Number: FDB045AN08A0
• Description: MOSFET N-CH 75V 90A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB045AN08A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 138nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB045AN08A0TR

FDB045AN08A0 Rev. A1
Typical Characteristics
Figure 9.
1000
2000
Figure 5.
100
150
120
0.1
10
7
6
5
4
3
90
60
30
1
0
0.1
4.0
0
Figure 7.
T
T
SINGLE PULSE
OPERATION IN THIS
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
J
C
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
LIMITED BY r
DD
T
= MAX RATED
= 25
Drain to Source On Resistance vs Drain
J
= 15V
AREA MAY BE
= 25
o
Forward Bias Safe Operating Area
C
V
o
V
C
DS
GS
4.5
20
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
Transfer Characteristics
T
V
V
I
J
D
1
GS
GS
, DRAIN CURRENT (A)
= 175
Current
= 10V
= 6V
o
C
5.0
40
T
C
10
= 25°C unless otherwise noted
T
J
DC
= -55
5.5
60
10μs
10ms
100μs
1ms
o
C
100
6.0
80
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
500
100
150
120
10
Figure 10.
Figure 6.
90
60
30
1
2.5
2.0
1.5
1.0
0.5
0
.01
-80
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
If R = 0
t
If R ≠ 0
t
AV
AV
STARTING T
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
-40
V
GS
Unclamped Inductive Switching
AS
V
Normalized Drain to Source On
= 10V
DS
)/(1.3*RATED BV
T
0.1
J
J
t
, DRAIN TO SOURCE VOLTAGE (V)
AS
, JUNCTION TEMPERATURE (
AV
= 150
0
*R)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
0.5
Capability
o
C
40
DSS
1
V
GS
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
- V
80
= 6V
DD
DSS
STARTING T
)
1.0
V
- V
GS
120
DD
10
= 10V, I
o
V
) +1]
V
C)
GS
GS
J
www.fairchildsemi.com
= 7V
T
= 5V
160
= 25
C
D
= 25
=80A
o
C
o
C
100
200
1.5