FDB045AN08A0 Fairchild Semiconductor, FDB045AN08A0 Datasheet - Page 6

• Manufacturer Part Number: FDB045AN08A0
• Description: MOSFET N-CH 75V 90A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB045AN08A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 138nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB045AN08A0TR

FDB045AN08A0 Rev. A1
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15.
g(REF)
Figure 19.
P
Figure 17.
TO OBTAIN
V
t
GS
P
V
GS
AS
Unclamped Energy Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01Ω
L
-
+
V
-
-
+
+
DD
V
V
DD
DD
0
I
0
0
V
V
V
g(REF)
0
0
V
DD
DS
GS
10%
GS
Figure 16.
= 2V
Figure 20.
Figure 18.
t
d(ON)
90%
Q
Q
Q
gs
50%
t
gs2
ON
g(TH)
10%
Unclamped Energy Waveforms
t
r
Switching Time Waveforms
I
AS
Gate Charge Waveforms
PULSE WIDTH
Q
V
t
DS
gd
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
t
d(OFF)
90%
V
t
DS
OFF
50%
www.fairchildsemi.com
t
V
f
10%
GS
V
= 10V
DD
90%