FDV303N Fairchild Semiconductor, FDV303N Datasheet

FDV303N

Manufacturer Part Number

FDV303N

Description

MOSFET N-CH 25V 680MA SOT-23

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDV303N.pdf (4 pages)

Specifications of FDV303N

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

450 mOhm @ 500mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

680mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

2.3nC @ 4.5V

Input Capacitance (ciss) @ Vds

50pF @ 10V

Power - Max

350mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Transistor Type

MOSFET

Voltage, Vds Typ

25V

Current, Id Cont

0.68A

Resistance, Rds On

0.6ohm

Voltage, Vgs Rds On Measurement

4.5V

Voltage, Vgs Th Typ

0.8V

Case Style

SOT-23

Current, Idm Pulse

Rohs Compliant

Yes

1212

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDV303NTR

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Current page: 1 of 4
Download datasheet (66Kb)

Symbol

ESD

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

DSS

GSS

General Description

These N-Channel enhancement mode field effect transistors are

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery circuits using either

one lithium or three cadmium or NMH cells. It can be used as an

inverter or for high-efficiency miniature discrete DC/DC

conversion in compact portable electronic devices like cellular

phones and pagers. This device has excellent on-state

resistance even at gate drive voltages as low as 2.5 volts.

FDV303N

Digital FET, N-Channel

STG

Mark:303

SOT-23

Parameter

Drain-Source Voltage, Power Supply Voltage

Gate-Source Voltage, V

Drain/Output Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient

SuperSOT

-6

- Continuous

- Pulsed

= 25

C unless other wise noted

SuperSOT

-8

Features

SO-8

25 V, 0.68 A continuous, 2 A Peak.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Alternative to TN0200T and TN0201T.

DS(ON)

= 0.45

= 0.6

FDV303N

-55 to 150

0.68

0.35

357

6.0

SOT-223

@ V

GS(th)

= 2.7 V.

= 4.5 V

< 1.5V.

August 1997

SOIC-16

FDV303N Rev.D1

Units

°C/W

°C

Related parts for FDV303N

FDV303N Summary of contents

Page 1

... Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T. TM SuperSOT -8 SO unless other wise noted A August 1997 4.5 V DS(ON 0 2.7 V. DS(ON) GS < 1.5V. GS(th) SOIC-16 SOT-223 FDV303N 25 8 0.68 2 0.35 -55 to 150 6.0 357 Units °C kV °C/W FDV303N Rev.D1 ...

Page 2

... 1.0 MHz 0 4 GEN Min Typ Max 55°C J 100 o -2.6 C 0.65 0.8 1.5 0.33 0.45 T =125°C 0.52 0.8 J 0.44 0.6 0 1.64 2.3 0.38 0.45 0.3 0.83 1.2 (Note) Units µA µ FDV303N Rev.D1 ...

Page 3

... Drain Current and Gate Voltage. 125°C 25°C 1.5 2 2 GATE TO SOURCE VOLTAGE ( Resistance Variation with Gate-To- Source Voltage 125° 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Figure 6. Body Diode Forward Voltage 1.2 ID= 0.5A 4.5 5 1.2 FDV303N Rev.D1 ...

Page 4

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss MHz rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =357° C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 357 °C/W JA P(pk ( Duty Cycle 100 25 100 300 300 FDV303N Rev.D1 ...

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