FDV303N Fairchild Semiconductor, FDV303N Datasheet - Page 4

• Manufacturer Part Number: FDV303N
• Description: MOSFET N-CH 25V 680MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FDV303N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 680mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: MOSFET
• Voltage, Vds Typ: 25V
• Current, Id Cont: 0.68A
• Resistance, Rds On: 0.6ohm
• Voltage, Vgs Rds On Measurement: 4.5V
• Voltage, Vgs Th Typ: 0.8V
• Case Style: SOT-23
• Current, Idm Pulse: 2A
• Rohs Compliant: Yes
• Dc: 1212
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV303NTR

Typical Electrical And Thermal Characteristics
0.03
0.01
0.3
0.1
Figure 7. Gate Charge Characteristics.
5
4
3
2
1
0
5
3
1
Figure 9. Maximum Safe Operating Area.
0.1
0
I = 0.5A
D
SINGLE PULSE
0.2
R
0.005
0.002
0.001
0.05
0.02
0.01
0.5
0.2
0.1
V
0.0001
JA
T = 25°C
1
GS
A
0.4
=357°C/W
= 4.5V
V
0.5
DS
D = 0.5
0.05
0.02
0.01
0.2
0.1
, DRAI N-SOURCE VOLTAGE (V)
Single Pulse
Q
g
1
, GATE CHARGE (nC)
0.8
0.001
2
Figure 11. Transient Thermal Response Curve.
1.2
5
V
DS
10
= 5V
0.01
1.6
15V
20
10V
40
2
0.1
t , TIME (sec)
1
0.001
150
100
5
4
3
2
1
0
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
50
20
10
5
0.1
f = 1 MHz
V
Dissipation.
GS
1
0.01
= 0V
V
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.1
P(pk)
1
10
T - T
R
R
Duty Cycle, D = t /t
J
JA
2
JA
1
t
1
A
(t) = r(t) * R
= 357 °C/W
t
= P * R
2
5
R
SINGLE PULSE
10
1
JA
JA
T = 25°C
(t)
100
2
A
JA
10
=357° C/W
C rss
C iss
C oss
FDV303N Rev.D1
100
300
25
300