FDG312P Fairchild Semiconductor, FDG312P Datasheet - Page 3
![MOSFET P-CH 20V 1.2A SC70-6](/photos/5/42/54217/261-sc-70-6_sml.jpg)
FDG312P
Manufacturer Part Number
FDG312P
Description
MOSFET P-CH 20V 1.2A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG312P.pdf
(5 pages)
Specifications of FDG312P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
330pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
3.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.2 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG312P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDG312P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3