FDG312P Fairchild Semiconductor, FDG312P Datasheet

MOSFET P-CH 20V 1.2A SC70-6

FDG312P

Manufacturer Part Number
FDG312P
Description
MOSFET P-CH 20V 1.2A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG312P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
330pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
3.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.2 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG312P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDG312P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDG312P
Quantity:
2 500
Company:
Part Number:
FDG312P
Quantity:
6 000
1999 Fairchild Semiconductor Corporation
FDG312P
P-Channel 2.5V Specified PowerTrench
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
Package Outlines and Ordering Information
Symbol
D
J
DSS
GSS
D
Power management
, T
Load switch
Battery protection
JA
Device Marking
stg
.
12
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
SC70-6
D
D
S
- Continuous
- Pulsed
D
D
Parameter
FDG312P
Device
G
T
A
= 25°C unless otherwise noted
Reel Size
Features
7’’
(Note 1b)
(Note 1)
(Note 1a)
(Note 1c)
(Note 1)
MOSFET
-1.2 A, -20 V. R
Low gate charge (3.3 nC typical).
High performance trench technology for extremely
Compact industry standard SC70-6 surface mount
low R
package.
DS(ON)
.
2
3
1
3
R
Tape Width
DS(on)
DS(on)
-55 to +150
Ratings
8mm
= 0.18
= 0.25
0.75
0.55
0.48
-1.2
260
-20
-6
8
@ V
@ V
6
4
5
GS
GS
February 1999
= -4.5 V
= -2.5 V.
Quantity
3000 units
Units
C/W
W
V
V
A
FDG312P Rev. C
C

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FDG312P Summary of contents

Page 1

... Compact industry standard SC70-6 surface mount package 25°C unless otherwise noted A Parameter (Note 1) (Note 1a) (Note 1b) (Note 1c) (Note 1) Device Reel Size FDG312P 7’’ February 1999 = 0. -4.5 V DS(on 0. -2.5 V. DS(on Ratings Units - -1 0.75 W 0.55 0.48 -55 to +150 C 260 C/W Tape Width Quantity 8mm 3000 units FDG312P Rev. C ...

Page 2

... Min Typ Max Units -20 V -19 mV 100 nA -100 nA -0.4 -0.9 -1.5 V 2.5 mV/ C 0.135 0.18 0.200 0.29 0.187 0. 3.8 S 330 3 0.8 nC 0.7 nC -0.6 A -0.83 -1 260 C/W when mounted on a minimum pad of 2oz copper. FDG312P Rev. C ...

Page 3

... SD Figure 6. Body Diode Forward Voltage Variation with Source Current -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -0. 125° 25° GATE TO SOURCE VOLTAGE ( 125°C J 25°C -55°C 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) and Temperature. FDG312P Rev. C ...

Page 4

... Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. C iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 260 C 0.01 0 100 SINGLE PULS E TIME (SEC) Power Dissipation. R ( =260°C/W JA P(pk ( Duty Cycle 100 300 FDG312P Rev. C 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...

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