FDG312P Fairchild Semiconductor, FDG312P Datasheet - Page 2

• Manufacturer Part Number: FDG312P
• Description: MOSFET P-CH 20V 1.2A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG312P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DMOS Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
Notes:
1. R
FS
2. Pulse Test: Pulse Width
BV
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
GS(th)
DSS
T
T
drain pins. R
Scale 1 : 1 on letter size paper
DSS
J
J
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
JC
is guaranteed by design while R
300 s, Duty Cycle
Parameter
(Note 2)
a) 170 C/W when
mounted on a 1 in
pad of 2oz copper.
(Note 2)
2.0%
JA
2
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 A, Referenced to 25 C
= -250 A, Referenced to 25 C
T
= -16 V, V
= V
= -5 V, I
= -10 V, V
= -10 V, I
= 0 V, I
= 8 V, V
= -8 V, V
= -4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -4.5 V, V
= -5 V, I
= -4.5 V, R
= -4.5 V
= 0 V, I
A
Test Conditions
= 25°C unless otherwise noted
GS
, I
b) 225 C/W when
D
D
S
D
D
DS
= -0.6 A
= -250 A
DS
= -250 A
D
copper.
= -1.2 A
of package sized 2oz.
= -0.5 A,
D
D
D
mounted on a half
GS
GS
= 0 V
DS
= -1.2 A,
GEN
= 0 V
= -1.2 A
= -1.2 A @125 C
= -1 A
= 0 V
= 0 V,
= -5 V
= 6
(Note 2)
Min Typ Max Units
-0.4
-20
-3
0.135
0.200
0.187
-0.83
-0.9
330
-19
2.5
3.8
3.3
0.8
0.7
80
35
12
16
7
5
c) 260 C/W when
mounted on a minimum
pad of 2oz copper.
-100
0.18
0.29
0.25
-1.5
-0.6
-1.2
100
15
22
26
12
-1
5
mV/ C
mV/ C
FDG312P Rev. C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A