FDG312P Fairchild Semiconductor, FDG312P Datasheet - Page 4

• Manufacturer Part Number: FDG312P
• Description: MOSFET P-CH 20V 1.2A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG312P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.03
0.01
5
4
3
2
1
0
0.3
0.1
0
10
3
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate-Charge Characteristics.
I
D
R
SINGLE PULSE
= -1.2A
0.005
0.05
0.01
V
JA
0.5
0.1
T
0.2
0.0001
GS
1
A
= 260°C/W
= 25°C
= -4.5V
D = 0.5
1
-V
0.2
0.1
0.5
0.05
DS
0.01
Q
, DRAIN-SOURCE VOLTAGE (V)
0.02
g
Single Pulse
, GATE CHARGE (nC)
1
0.001
2
2
V
DS
= -5V
Figure 11. Transient Thermal Response Curve.
-10V
5
(continued)
-15V
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
10
3
0.01
20
50
4
t , TIME (sec)
0.1
1
1000
30
24
18
12
0.0001
300
100
6
0
30
10
0.1
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
Figure 10. Single Pulse Maximum
GS
0.001
0.2
1
= 0 V
-V
DS
Power Dissipation.
0.01
, DRAIN TO SOURCE VOLTAGE (V)
0.5
SINGLE PULS E TIME (SEC)
P(pk)
0.1
1
T - T
Duty Cycle, D = t / t
10
J
R
R
JA
t
1
A
JA
2
(t) = r(t) * R
t
= P * R
1
2
=260°C/W
JA
1
10
5
(t)
SINGLE PULSE
R
JA
2
100
JA
T
= 260
A
= 25
10
100
C rss
C oss
C iss
o
o
C/W
C
FDG312P Rev. C
300
20
1000