NDT014 Fairchild Semiconductor, NDT014 Datasheet
NDT014
Specifications of NDT014
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NDT014 Summary of contents
Page 1
... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) September 1996 = 0 10V. DS(ON DS(ON NDT014 Units 60 ±20 ±2.7 ±10 3 1.3 1.1 -65 to 150 42 °C/W 12 °C/W NDT014 Rev °C ...
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... Turn - Off Delay Time D(off) Turn - Off Fall Time Total Gate Charge g Gate-Source Charge Gate-Drain Charge gd Conditions 250 µ =125° - 250 µ 1 1 1.0 MHz V = GEN GEN Min Typ Max Units µA 250 µA 100 nA -100 0.18 0 155 100 1.2 3 5.8 nC NDT014 Rev. C1 ...
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... C/W when mounted on a 0.0123 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions 2.7A (Note /dt = 100 A/µ Min Typ Max Units 2 0.95 1.6 V 140 ns is guaranteed NDT014 Rev. C1 ...
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... Figure 6. Gate Threshold Variation with V = 5.5V GS 6.0 6.5 7.0 8 DRAIN CURRENT (A) D and Drain Current 125°C J 25°C -55° DRAIN-CURRENT(A) D Current and Temperature 250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature 125 150 NDT014 Rev. C1 ...
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... D C iss oss rss Figure 10. Gate Charge Characteristics. t d(on OUT V OUT DUT Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( 10V = 2.7A DS 20V GATE CHARGE (nC off t t d(off PULSE WIDTH 1 INVERTED NDT014 Rev. C1 ...
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... Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. (continued 125°C 1 0.5 V 0.1 SINGLE PULSE 0. 0. 0.1 0.2 Figure 14. Maximum Safe Operating Area. 0.01 0 TIME (sec 10V C/W = 25° DRAIN-SOURCE VOLTAGE ( ( See Note P(pk ( Duty Cycle NDT014 Rev. C1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...