FDG315N Fairchild Semiconductor, FDG315N Datasheet - Page 4

• Manufacturer Part Number: FDG315N
• Description: MOSFET N-CH 30V 2A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG315N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 5V
• Input Capacitance (ciss) @ Vds: 220pF @ 15V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
10
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
0.1
Figure 7. Gate-Charge Characteristics.
R
I
0.005
D
0.05
0.01
DS(ON)
= 2A
SINGLE PULSE
R
0.5
0.1
0.0001
1
JA
V
T
GS
A
= 260
LIMIT
= 25
D = 0.5
= 10V
1
0.2
o
0.1
o
C
0.05
C/W
V
0.01
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
Q
Single Pulse
1
g
, GATE CHARGE (nC)
2
0.001
DC
10s
V
DS
Figure 11. Transient Thermal Response Curve.
1s
= 5V
3
100ms
(continued)
10
10ms
15V
1ms
0.01
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
10V
4
100
5
t , TIME (sec)
0.1
1
300
250
200
150
100
30
24
18
12
50
0.0001
6
0
0
0
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum
0.001
1
5
V
Power Dissipation.
DS
0.01
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
10
P(pk)
0.1
T - T
Duty Cycle, D = t / t
10
J
R
15
JA
R
t
1
A
(t) = r(t) * R
JA
C
C
C
t
= P * R
1
2
ISS
OSS
RSS
=260°C/W
20
JA
10
1
SINGLE PULSE
R
(t)
JA
2
100
JA
T
V
f = 1MHz
= 260
A
GS
= 25
25
100
= 0 V
o
o
C
C/W
FDG315N Rev. C
300
1000
30