FDFMA2P853T Fairchild Semiconductor, FDFMA2P853T Datasheet

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FDFMA2P853T

Manufacturer Part Number
FDFMA2P853T
Description
MOSFET P-CH 20V 3A 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFMA2P853T

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FDFMA2P853T Rev.B1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDFMA2P853T
Integrated P-Channel PowerTrench
–20 V, –3.0 A, 120 mΩ
Features
MOSFET
Schottky:
V
V
I
P
T
V
I
R
R
R
R
D
O
J
DS
GS
D
RRM
θJA
θJA
θJA
θJA
, T
Max r
Max r
Max r
V
Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
RoHS Compliant
Free from halogenated compounds and antimony
oxides
F
Symbol
Device Marking
STG
< 0.46 V @ 500 mA
DS(on)
DS(on)
DS(on)
MicroFET 2X2 Thin
53
:
= 120 mΩ at V
= 160 mΩ at V
= 240 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS
GS
GS
FDFMA2P853T
-Pulsed
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
Device
Pin 1
D
D
D
C
= –3.0 A
= –2.5 A
= –1.0 A
T
A
A
= 25 °C unless otherwise noted
T
T
T
A
A
A
G
Parameter
= 25 °C
= 25 °C
= 25 °C
NC
MicroFET 2x2 Thin
S
Package
D
1
®
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
MOSFET and Schottky Diode
Reel Size
7 ’’
NC
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1d)
A
(Note 1c)
D
2
3
1
Tape Width
8 mm
–55 to +150
Ratings
–3.0
–20
173
140
1.4
0.7
±8
–6
30
86
86
1
December 2008
5
4
6
www.fairchildsemi.com
3000 units
Quantity
S
C
G
Units
°C/W
°C
W
V
V
A
V
A
tm

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FDFMA2P853T Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device 53 FDFMA2P853T ©2008 Fairchild Semiconductor Corporation FDFMA2P853T Rev.B1 ® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other = –3.0 A ultra-portable applications ...

Page 2

... Source to Drain Diode Forward Voltage Reverse Recovery Time rr Q Reverse Recovery Charge rr Schottky Diode Characteristics I Reverse Leakage R I Reverse Leakage R V Forward Voltage F V Forward Voltage F FDFMA2P853T Rev. °C unless otherwise noted J Test Conditions = –250 µ –250 µA, referenced to 25 ° – ± ...

Page 3

... C/W when mounted pad copper. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. FDFMA2P853T Rev. °C unless otherwise noted A 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. 2 pad copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. ...

Page 4

... Figure 3. Normalized On- Resistance vs Junction Temperature 6 µ PULSE DURATION = 300 s DUTY CYCLE = 2% MAX 125 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDFMA2P853T Rev. °C unless otherwise noted J 3 1 µ s 0.5 1.5 2.0 2.5 Figure 2. 0.28 0.24 0.20 0.16 ...

Page 5

... 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 10 1 0.1 0.01 0.001 REVERSE VOLTAGE (V) R Figure 11. Schottky Diode Reverse Current FDFMA2P853T Rev. °C unless otherwise noted J 700 600 500 400 300 200 100 100 0.1 100 0. 0.001 ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0. Figure 13. Junction to Ambient Transient Thermal Response Curve FDFMA2P853T Rev. °C unless otherwise noted J SINGLE PULSE 173 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK θJA θ 100 ...

Page 7

... Dimensional Outline and Pad Layout FDFMA2P853T Rev.B1 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDFMA2P853T Rev.B1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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