FDFMA2P853T Fairchild Semiconductor, FDFMA2P853T Datasheet - Page 3

• Manufacturer Part Number: FDFMA2P853T
• Description: MOSFET P-CH 20V 3A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P853T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDFMA2P853T Rev.B1
Electrical Characteristics
Notes:
1: R
user's board design.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
(a) MOSFET R
(b) MOSFET R
(c) Schottky R
(d) Schottky R
θJA
is determined with the device mounted on a 1 in
θJA
θJA
θJA
θJA
= 86
= 140
= 86
= 173
o
o
C/W when mounted on a 1 in
C/W when mounted on a 1 in
o
o
C/W when mounted on a minimum pad of 2 oz copper.
a)86
mounted on a 1
in
copper.
C/W when mounted on a minimum pad of 2 oz copper.
2
pad of 2 oz
o
C/W when
T
2
2
A
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.
pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.
= 25 °C unless otherwise noted
b)173
mounted
minimum pad of 2
oz copper.
o
C/W when
on
a
3
θJC
c)86
mounted on a 1
in
copper.
is guaranteed by design while R
2
pad of 2 oz
o
C/W when
θJA
is determined by the
www.fairchildsemi.com
d)140
mounted
minimum pad of 2
oz copper.
o
C/W when
on
a