SI3457DV Fairchild Semiconductor, SI3457DV Datasheet

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... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ April 2001 –10 V DS(ON –4.5 V DS(ON Ratings Units – –4 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units Si3457DV Rev A1 (W) ...

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... Min Typ Max Units –30 V –22 mV/ C –1 100 nA –100 nA –1 –1.8 – mV =125 –20 A 8.4 S 470 pF 126 8 –1.3 A –0.77 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper Si3457DV Rev A1 (W) A ...

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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature -4.5V GS -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si3457DV Rev A1 ( 1.2 ...

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... Figure 10. Single Pulse Maximum 0.001 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 156 C/W JA P(pk ( Duty Cycle 100 Si3457DV Rev A1 (W) 30 1000 ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...