SI3457DV Fairchild Semiconductor, SI3457DV Datasheet - Page 4

• Manufacturer Part Number: SI3457DV
• Description: MOSFET P-CH 30V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of SI3457DV

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
D
0.01
R
= -4A
SINGLE PULSE
0.1
DS(ON)
R
0.00001
1
V
JA
T
GS
A
= 156
LIMIT
= 25
= -10V
D = 0.5
2
o
o
0.2
C
C/W
0.1
-V
0.05
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
0.0001
SINGLE PULSE
4
DC
1s
Figure 11. Transient Thermal Response Curve.
100ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
6
10ms
V
0.001
DS
10
= -5V
1ms
8
100 s
-15V
-10V
0.01
100
10
t
1
, TIME (sec)
600
450
300
150
0.1
10
8
6
4
2
0
0
0.01
0
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum
C
RSS
6
-V
C
1
0.1
OSS
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
12
t
1
C
, TIME (sec)
ISS
10
1
18
P(pk)
Duty Cycle, D = t
T
R
J
R
JA
- T
JA
(t) = r(t) + R
A
SINGLE PULSE
10
= 156
R
t
100
= P * R
1
t
JA
T
2
24
A
= 156°C/W
= 25°C
Si3457DV Rev A1 (W)
o
C/W
f = 1 MHz
V
GS
JA
1
= 0 V
JA
(t)
/ t
2
100
30
1000